摘要
本文着重研究了玻璃栅介质(GGI)氢化非晶硅双极性场效应晶体管(α-Si:HBFET)的转移特性,并比较了SiO_2和SiO_2/α-SiN_x:H栅介质α-Si:HFET的性质.业已发现:(1)硼掺杂和磷掺杂不仅可以人大地提高(GGI)α-Si:HBFET的电流驱动能力,而且可以大大地改善其双极对称性.(2)(GGI)未掺杂α-Si:HBFET可以用来构成静态特性良好的CMOS倒相器.(3)SiO_2栅介质α-Si:HFET具有典型的双极性,但是SiO_2/α-SiN_x:H栅介质α-Si:HFET则不是双极性的.
In this paper, we have emphatically studied the transfer characteristic of ambipolar α-Si:HFET (α-Si:HBFET) with a glass gate insulator (GGI) and compared the performances of α-Si:HFET with SiO2 and SiO2/α-SiNx: H gate insulators. We have found the following results: (1)B-doping and P-doping can not only greatly increase the current driving capability of (GGI) α-Si:HBFET but also improve the characteristic of the ambipolar symmetry; (2) Undoped (GGI) α-Si:HBFETs can be used to construct α-Si:H CMOS inverter with very good static behaviour; (3)Though SiO2 gate insulator α-Si:HFET is a typical ambipolar device, the Si02/α-SiNx: H gate insulator α-Si:H FET has no bipolarity.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第4期358-363,共6页
Research & Progress of SSE
