摘要
以溶胶凝胶法制备的TiO2作为空穴缓冲层,在结构为ITO/TiO2/NPB/Alq/LiF/Al的器件中,改善了器件的发光效率。研究了TiO2厚度对器件发光特性的影响。在电流密度为100mA/cm2时,有缓冲层的器件发光效率为5cd/A,而没有缓冲层的器件发光效率为3.45cd/A,有TiO2缓冲层的器件发光效率有了明显提高。
TiO2 achieved by the sol-gel method is inserted in organic electroluminescent (EL) devices as a buffer layer. The effect of the different TiO2 thickness on the device luminescence with the structure of ITO/TiO2/NPB/Alq3/LiF/AI is studied. When the buffer layer is 2 nm, the voltage of the devices decreases and the current density of the devices increases, because of the tunneling effect, and the efficiency of the device is best at the buffer layer thickness of 6 nm, because of the balance of the injecting hole and electron. As the current density is 100 cd/mA2, the efficiency of the 6 nm-thickness buffer layer device is 5 cd/A, and that without buffer layer device is 3.45 cd/A. The smooth of the ITO surface is also a factor that the efficiency increases.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2004年第5期520-523,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(69976010
10174001
90201004)
北方交通大学基金资助项目(2001XM06)
关键词
有机电致发光
TIO2
Sol—gel法
二氧化钛
空穴缓冲层材料
Electroluminescence
Light emitting diodes
Luminescence of organic solids
Sol
gels
Thin film devices
Titanium dioxide
