摘要
一、引言 等离子体化学气相沉积(PCVD)薄膜是广泛应用的新技术。它沉积温度低,可沉积薄膜种类多,包括各种作为功能材料和结构材料的无机非金属薄膜。刘大明等对PCVD的动力学过程进行过研究。PCVD设备及工艺较简单,绕镀能力强。
In this paper the parameters of PCVD of TiN is studied experimentally. Viscosity correction has been made for the measurement of TiCl4 flow rate. The dependence of film hardness on the ratio of H2/N2 is measured. The ionization,ne, Te and E in plasma are estimated according to the current and voltage of dischares
出处
《核聚变与等离子体物理》
CAS
CSCD
北大核心
1992年第3期182-185,189,共5页
Nuclear Fusion and Plasma Physics
关键词
TIN
等离子体
参数
PCVD
薄膜
Plasma chemical vapor deposition, TiN, Plasma, parameter.
