摘要
外电场对光学电压互感器(OpticalVoltageTransformer,OVT)的干扰与OVT的结构有关系,通光方向和电压方向不同,外电场对OVT的影响也不同。该文详细分析了外电场对OVT的横向调制和纵向调制两种基本结构的影响。针对这两种结构抗电场干扰的特点,兼顾实际高电压测量中的信号处理,提出了一种OVT传感头结构的改进措施。
Applied electrical field interference to optical voltage transformer has something to do with its own structure of OVT. Applied electrical field has different effects on OVT when the directions of light beam and voltage are different. This paper details these effects upon the two basic structures of OVT--transverse and longitudinal modulation. Considering their characteristic and signal process of real high-voltage measurement, it proposes an improved structure of OVT.
出处
《继电器》
CSCD
北大核心
2004年第11期13-15,19,共4页
Relay
关键词
光学电压互感器
电场干扰
信号处理
电场强度
optical voltage transformer
transverse and longitudinal modulation
electrical field
