摘要
测量了用金属有机物化学气相沉积(MOCVD)方法在GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层的近红外光致发光光谱,观察到三个与深能级有关的发光带,其峰值能量分别为1.17,0.99和0.85eV.研究了这些发光带的发光强度,峰值位置和半宽度随温度的变化关系,并初步分析其来源.
The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1992年第10期897-901,共5页
Acta Optica Sinica
基金
国家自然科学基金
中国科学院长春物理研究所激发态物理开放实验室基金资助课题
关键词
近红外
光致发光
深能级
镓铟磷
near-infrared photoluminescence, deep level, metalorganic chemical Vapor deposition, Ga0.5In0.5P.
