摘要
采用Aixtron 2600G3MOCVD设备外延生长了GaAs/GaInP材料,并结合金相显微镜、X射线衍射仪以及二次离子质谱仪系统地研究了掺杂源Te对GaInP外延层材料特性的影响。实验发现,Te会破坏GaInP外延层的表面形貌,在GaInP表面形成丘状结构及线条,且该丘状结构的尺寸随着GaInP厚度的增加而逐渐增大。在掺杂浓度较高时,Te会破坏GaInP的晶格,造成晶格膨胀。GaInP中Te的并入效率随着厚度的增加而增加,且掺杂浓度越高就越快趋于平稳。此外,Te在As化物中的并入效率大于在P化物中的并入效率。
In this paper, GaAs/GaInP films were epitaxially grown using an Aixtron 2600 G3 MOCVD system and the effects of Te doping on the characteristics of GaInP epilayers were inves- tigated systematically by using metallomicroscope, XRD and SIMS. It is found that the surface morphology of GaInP is deteriorated and hillocks and lines are formed on the surface for the Te doping sample. The size of the hillocks increases with the thickness of GaInP epilayers. When Te is highly doped, the lattice structure of GaInP is distorted and lattice expansion was caused. The incorporation efficiency of Te in GaInP increases with the GaInP thickness, and tends to stabilized faster under high doping concentrations. Furthermore, the incorporation efficiency of Te in arse- nide is higher than that in phosphide.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期63-66,共4页
Research & Progress of SSE
基金
国家高技术研究发展计划(863计划)资助项目(2011AA050512)
