摘要
在LiNbO3中掺进MgO,In2O3,Er2O3以Czochralski技术系统生长了Mg(3mol%):In(1mol%):Er(1mol%):LiNbO3,Mg(3mol%):In(2mol%):Er(1mol%):LiNbO3,Mg(3mol%):In(3mol%):Er(1mol%):LiNbO3晶体。Mg(3mol%):In(3mol%):Er(1mol%):LiNbO3晶体荧光光谱表明4I13/2→ 4I15/2(1.53μm)易实现激光振荡。采用质子交换工艺制作Mg:In:Er:LiNbO3晶体波导基片并以m线法研究Mg:In:Er:LiNbO3晶体波导基片的光损伤。发现抗光损伤能力依次为:Mg:In(3mol%):Er:LiNbO3>Mg:In(2mol%):Er:LiNbO3>Mg:In(1mol%):Er:LiNbO3>Er:LiNbO3。以锂空位模型研究Mg:In:Er:LiNbO3晶体抗光损伤能力增强的机理。
Mg(3mol%):In(1mol%):Er(1mol%):LiNbO_3,Mg(3mol%):In(2mol%):Er(1mol%):LiNbO_3,Mg(3mol%):In(3mol%):Er(1mol%):LiNbO_3 crystals were grown by Czochralski technique. The fluorescence spectrum of Mg(3mol%):In(3mol%):Er(1mol%):LiNbO_3 was measured. The result showed that ()~4I_(13/2)→ ()~4I_(15/2)(1.53μm)easily realizes laser vibration. Taking m-line method, the paper studied the photo-damage of Mg:In:Er:LiNbO_3 waveguide substrate made by proton exchange technology. It was found that the order of photo-damage resistance ability is as follows: Mg:In(3mol%):Er:LiNbO_3>Mg:In(2mol%):Er:LiNbO_3>Mg:In(1mol%):Er:LiNbO_3>Er:LiNbO_3.The mechanism of enhancement of the photo-damage resistance ability of Mg:In:Er:LiNbO_3 crystal was discussed based on the Li-site vacancy model.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第2期197-200,共4页
Journal of Synthetic Crystals
基金
国家基础研究973(G19990330)
高技术计划863(2001AA31304)资助项目
