1Habing D H. The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits [J]. IEEE Trans Nucl Sci, 1965, 12(5): 91-100
2Buchner S, McMorrow D, Melinger J, et al. Laboratory tests for single-event effects. IEEE Trans Nucl Sci,1996, 43(2): 678-686
3Mclean F B, Oldham T R. Charge funneling in n- and p- type Si substrates. IEEE Trans Nucl Sci, 1982,29(6): 2018-2023
4Johnston A H. Charge generation and collection in p-n junctions excited with pulsed infrared lasers. IEEE Trans Nucl Sci, 1993, 40(6); 1694-1702
5Melinger J S, Buchner S, McMorrow D, et al. Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies. IEEE Trans Nucl Sci, 1994, 41(6): 2574-2584
6Buchner S, Knudson A, Kang K, et al. Charge collection from focused picosecond laser pulses. IEEE Trans Nucl Sci, 1988, 35(6): 1517-1522
7Gossett C A, Hughlock B W, Hohnston A H. Laser simulation of single-particle effects. IEEE Trans Nucl Sci, 1992, 39(6): 1647-1653
