摘要
对p沟道锗 硅异质纳米结构存储器空穴隧穿的物理过程作了详细的分析 ,并对器件的擦写和保留时间特性进行了数值模拟 .研究结果表明 :由于异质纳米结构的台阶状隧穿势垒和较高价带带边差的影响 ,与传统的硅纳米结构存储器和n沟道锗 硅异质纳米结构存储器相比 ,当前器件的保留时间分别提高到 10 8和 10 5 s以上 ,同时器件的擦写时间特性基本保持不变 .这种存储器结构单元有效地解决了快速擦写编程和长久存储之间的矛盾 。
Based on analysis of the physical process of hole tunneling, the time character is tics of the writing/erasing and retention in p-channel Ge/Si hetero-nanocr ystal-based metal_oxide_semiconductor field_effect transistor(MOSFET) memory ha ve been simulated numerically. Owing to the advantages of a compound potential well and a higher band offset in the valence band, the rete ntion time is increased up to the orders of over 10 8 and 10 5, compared with the c onventional Si_nanocrystal_based MOSFET memory and the n-channel Ge/Si hete ro_nanocrystal_based MOSFET memory, respectively. Moreover, the present device k eeps on having high_speed writing/erasing in the direct_tunneling ultrathin oxide reg ime. It would be expected to solve the contradictory problem between high_speed programming and long retention, therefore, the performance would be substantiall y improved.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第4期1211-1216,共6页
Acta Physica Sinica
基金
家重点基础研究专项基金 (批准号 :G0 0 1CB30 9)
国家自然科学基金(批准号:90 1 0 1 0 2 1
6 0 2 36 0 1 0
6 0 2 2 50 1 4)资助的课题~~
