摘要
利用离子束辅助沉积工艺,在锗和玻璃基片上制备了高强度ZnS红外增透膜,与直接热蒸发镀相比,降低了基片的沉积温度,改善了膜层的组织结构,提高了膜的机械强度、抗腐蚀性、耐冷热冲击能力和红外透过率。
High-intensity IR antireflection ZnS thin films were deposited onto Ge and glass substrates using the IAD technique. Compared with the thermal evaporation method,it is shown that this technique can lower the deposition temperature,improve the texture of the thin films, and enhance the mechanical strength, the corrosion resistance, the shockproof of cold-ness and heat, and the IRtransmissivity of the films.
出处
《真空科学与技术》
CSCD
1992年第1期26-31,共6页
Vacuum Science and Technology
