摘要
推广和发展了一种二分掩膜方法,采用这种方法,使得通过n次实验可以既不重复也不遗漏地得到所用n种元素的所有可能组合,即2n个全不相同的芯片单元,并论证了其惟一性.对于离子束溅射沉积的CoAg薄膜,采用组合离子注入技术制备了由Fe、Mn、Ga、Cu4种元素所组成的磁光芯片.在1T的恒定磁场条件下,系统地测试了芯片各单元在不同退火条件下的磁光克尔谱.结果表明,采用薄膜与组合离子注入相结合的方法,可以快速、有效、低成本地发现新型磁光存储颗粒膜材料候选体系.
A dichotomous mask scheme was developed, which makes it feasible to obtain 2n chip units through n steps, moreover, these units construct a complete combination of the n elements or compositions adopted during the fabrication. Using combinatorial ion implantation, a magnetooptic materials chip composing Fe, Mn, Ga and Cu was fabricated in ion sputtered CoAg films. The magnetooptic Kerr effect (MOKE) of each unit was measured under 1T magnetic field. The experimental results show that combinatorial ion implantation enables us to develop novel materials systems of granular magnetooptic films for information storage more rapidly, efficiently and cost-effectively.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
2004年第2期291-294,共4页
Journal of Shanghai Jiaotong University
基金
国家自然科学基金资助项目(19975067
10075074)
关键词
二分掩膜
磁光芯片
克尔效应
Data storage equipment
Ion implantation
Magnetic fields
Masks
Microprocessor chips
Sputter deposition
Thin films
