摘要
利用微波等离子体化学气相沉积(MPCVD)技术,以丙酮为碳源,用二甲基二硫和三氧化二硼作掺杂源,在硅衬底上制备了硼与硫共掺杂的金刚石薄膜。用俄歇谱分析金刚石薄膜中硫的含量,用傅里叶红外光谱(FTIR)分析了薄膜表面键结构,用扫描电子显微镜(SEM)观测薄膜的表面形貌,X射线衍射(XRD)和喇曼(Raman)光谱表征膜层的结构。结果表明:微量硼的加入促进硫在金刚石中的固溶度,使硫在金刚石中的掺杂率提高了近50%;随着薄膜中硫含量的增加,薄膜的导电性增加,当薄膜中硫含量达到0.15%(原子分数)时其导电激活能为0.39eV。
Sulfur incorporation in diamond was performed by B-S co-doping method via microwave plasma chemical vapour deposition (MPCVD) technique on undoped Si as substrates. Dimethyl disulfide and boron oxide were the doping sources, which were diluted in acetone. Auger electron spectra (AES) confirmed the content of sulfur in the films. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectroscopy were employed to characterize the as-grown films. It was found that limit amounts of boron facilitated sulfur incorporation into diamond. SEM observations showed that the crystal quality of these films increases with increasing S incorporation. The Fourier transform infrared (FTIR) supported the existence of C, S and B bonding in the films. Even with S incorporation levels of 0.15%, measurements of films resistivity showed that the films had significant high resistance. This might reflect the defects in these polycrystalline films, which could act as compensating acceptors and soak up the donated electrons from sulfur.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第1期49-51,54,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50082005)
关键词
金刚石薄膜
硼
硫
掺杂
MPCVD
Acetone
Auger electron spectroscopy
Boron
Chemical vapor deposition
Electric resistance
Fourier transform infrared spectroscopy
Raman spectroscopy
Scanning electron microscopy
Semiconductor doping
Substrates
Sulfur
X ray diffraction analysis
