摘要
对适用于超深亚微米电路模拟的 MOSFET器件模型进行了研究 ,完成计入量子效应、多晶硅耗尽效应等基于 BSIM3的 MOSFET模型。针对阈值电压模型以及 I- V模型中的参数编写了模型参数提取程序 ,采用最小二乘法原理 ,并采用麦夸脱算法以降低参数提取结果对初值的依赖 ,对已有参数进行了修正。模型以及参数提取结果都分别进行了验证。
We present the st udy of ultra deep submicron MOSFET compa ct modeling for circuit simulation.Then a MOSFET compact model based on the BSIM 3 is developed.In this model,quantum eff ects and polysilicon depletion effects h ave been taken into account.Furthermore, a model parameter extraction program for threshold voltage and I-V model param et er is developed.It uses the least square method and adopts the Marquardt algorit hm to reduce the extracted result depend ence on the initial value.Moreover,the e xtracted parameter can be revised and op timized.In the end,the model and the par ameter extraction result are validated r epectively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第4期406-411,共6页
Research & Progress of SSE
