摘要
分析了国内外深冷温度毫米波低噪声放大器(LNA)的发展现状。考虑到基础元器件结构在深冷温度下的行为,以及行为表征是电路设计的基础,对深冷温度基础元器件的模型和建模方法进行了讨论。对毫米波LNA的设计方法进行了总结。最后,对深冷温度毫米波LNA设计技术的研究方向提出了建议。
The development status of cryogenic millimeter wave low noise amplifier（LNA）at home and abroad was analyzed.Considering that the behavior and characterization of the basic components and structures at cryogenic temperature were fundamental to the circuit design,the model and modeling method for the basic components and structures at cryogenic temperature were discussed.The design method of millimeter wave LNA at cryogenic temperature was summarized.Finally,the development direction of millimeter wave LNA design for cryogenic temperature was proposed.
作者
刘军
周明珠
李志芸
LIU Jun; ZHOU Mingzhu; LI Zhiyun(Key Laboratory o f RF Circuits and Systems of Ministry of Education , Hangzhou Dianzi University , Hangzhou 310018,P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第5期672-676,共5页
Microelectronics
基金
浙江省自然科学基金资助项目(LY14F010017)
国家自然科学基金资助项目(61774035)
浙江省高教研究立项课题(ZD201502)
杭州电子科技大学研究生核心课程建设项目(HXKC2017008)
关键词
深冷温度
毫米波低噪声放大器
deep cryogenic temperature
millimeter wave LNA
