摘要
介绍热壁束外延法生长ZnSe/GaAs异质结工作。低能电子衍射和俄歇电子能谱对样品的原位检测表明,用此方法可以在GaAs(100)衬底上外延得到单晶的ZnSe(100)薄膜。当外延生长速率大时,Znse薄膜质量下降,样品的Raman谱中出现TO模。X射线衍射实验结果表明,这种外延膜质量的退化主要是由于在ZnSe(100)薄膜体内存在〈111〉方向的晶核。
ZnSe (100) single crystal films are grown by hot wall beam epitaxy on GaAs (100) substrate. The quality of films are examined by LEED and AES in situ. The films show sharp C(2×2) LEED pattern. When sample are prepared with high growth rate, the Raman spectra show that there are TO modes which are usually forbidden in ZnSe (100) films. ZnSe(100) films with <111> twin can be explained by the TO modes in the Raman spectra. This interpretation is supported by the result of XRD.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第11期1856-1861,共6页
Acta Physica Sinica
