摘要
金刚石薄膜的气相合成及应用研究近年来取得了飞速发展，气相合成金刚石薄膜的ＣＶＤ方法已达２０几种，最大的沉积速度已达到每小时９３０μｍ．硼掺杂金刚石薄膜的空穴载流子浓度已达到１０～（１８）ｃｍ～（－３），电阻率已达到１０～（－２）Ω·ｃｍ，在硅衬底表面实现了金刚石薄膜的选择性生长．金刚石薄膜热沉使半导体锁相列阵激光器的输出功率提高了１０％左右，金刚石薄膜作为刀具涂层使刀具的寿命得到提高，金刚石热敏电阻、发光管、场效应管等器件原型电子器件在实验上已获得成功．
The preparation and application of diamond films have seen great progress in recent years. More than 20 methods have been reported and a maximum growth rate for diamond films of about 930 μm per hour has been achieved. For boron doped diamond films the maximum hole concentration measured is 10^(18)cm^(-3) and the specific resistance as low as 10^(-2) Ω ·cm Selective deposition of diamond films on Si wafers has been achieved. By using diamond film heat sinks in the thermal design of phase-locked semiconductor laser diode arrays, the output power of the diodes has been increased by approximately 10% The life-time of tools has been increased by use of diamond coatings. Simple diamond devices, such as thermistors, light diodes and FET's have been fabricated in some laboratories.
出处
《物理》
CAS
北大核心
1992年第5期280-285,共6页
Physics
