摘要
本文研究了电子束蒸发的α-Si_(1-x)Er_x 薄膜的光吸收特性.其结果表明,薄膜的组分变化对近红外长波的吸收特性影响较大;光学带隙随组分 x_(Er) 的增大而变窄,由1.52eV 减小到约1.22eV;掺入适量的 Er 能部分地补偿 a-Si 薄膜中的硅悬挂键.本文还利用 Cody 的无序理论,结合 T.Oestereich 等人对 a-Si∶H∶Er 薄膜的光致发光研究,对实验结果进行了分析讨论.
The optical absorption properties of electron beam evaporated a-Si_(1-x)Er_x films have beenstudied,The results show that the changes of the content Er in the films affect the opticalabsorption in the near infrared region more sensitively than in the shorter wave range.Theoptical gap of the films narrows from 1.52eV to 1.22eV as the content Er increases in theinvestigated part.The dangling bonds in a-Si films can be compensated with the doping Erelement.The results are discussed by means of the disorder theory of G.D.Cody and theluminescence spectra of a-Si:H:Er film reported by T.Oestereich in Germany.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第4期455-459,共5页
Journal of Inorganic Materials
关键词
稀土族
非晶硅
薄膜
光学带隙
Optical absorption
Rare earth
a-Si film
Optical gap
