微波等离子体化学气相沉积的 a-Si∶H 性能研究

Study on the Property of a-Si:H Film Deposited by MPCVD

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摘要本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10^(-3)到10^(-11)((?)cm)^(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%. Several aspects of the property of a-Si:H deposited via microwave plasma chemical vapordeposition (MPCVD) at high deposition rate were evaluated.The optoelectrical property,darkconductivity activation energy,optical band gap,optical absorption behavior,dangling bonddensity,and hydrogen content of the deposit were studied and examined,based on the influenceof the preparation conditions.It showed that in the deposition rate range of 30～90(?)/s,thedeposited a-Si:H exhibited its ratio of photo conductivity(under illumination of 10~5 Lux)todark conductivity up to 10~3～10~5,while the dark conductivity lay within 10^(-3)to 10^(-11) (Ωcm)^(-1),and their activation energies were found to be 0.23～0.88eV.(in the temperaturerange 10～200℃).The typical values of the optical band gap were 1.40～2.20eV,wherea thehydrogen content varied from 2at% to 20.0 at%.

作者王春林孟广耀杨萍华彭定坤

机构地区中国科学技术大学材料科学与工程系中国科学院中国科技大学结构分析开放实验室