摘要
以(Pb_(1-z/100)La_(x/100))Ti_(1-x/400)O_3(简称 PLT)烧结粉末为溅射靶材,用射频磁控溅射技术,研究了PLT 薄膜的淀积工艺及其结构和电光性能。在玻璃和(0001)Al_2O_3衬底上制备出了高度定向的 PLT 薄膜,而在(100)SrTiO_3衬底上外延生长出 PLT 薄膜。研究了玻璃衬底上生长高度定向 PLT 薄膜的机制。用新颖的法拉第磁光调制技术测量了 PLT 薄膜的电光系数,得到薄膜的二次方电光系数 R>0.6×10^(-15)(m/v)~2。
We have studied the processes,structures and electro-optical properties of lanth-anum-modified lead titanate(PLT)thin films prepared by RF magnetron sputteringfrom sintered powder targets.Highly oriented PLT thin films on glass and(0001)Al_2O_3 substrates and an epitaxial growth PLT thin films on(100)SrTiO_3 havebeen deposited.The growth mechanism of oriented PLT film on amorphous glasswas discussed.Electro-optical coefficient(R>0.6×10^(-10)m^2/v^2)of PLT films onglass was measured by a new method based on Faraday magneto-optical effect.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期176-182,共7页
Journal of Inorganic Materials
关键词
半导体
铁电薄膜
磁控溅射
Magnetron sputtering
Ferroelectric thin film
Growth of thin film
Electrooptical effect
