摘要
近十年来,我国采用离子束刻蚀进行微细加工以及离子束辅助镀膜在电子和光学工业中获得了广泛应用。采用离子束增强镀膜制造超导膜、贮氢合金膜以及离子束注入表面改性等都得到了广泛的研究及应用。在这些先进的工艺中基本上都使用了考夫曼离子源,考夫曼离子源是在空间电推进技术基础上发展起来的,由于要用于空间推进,它必然要具备低气耗、低能耗、高效率、高稳定、长寿命等优点,此外它必须能产生大面积、均匀、强流的离子束。
The broad beam Kaufman ion source has been widely used in many fields of thin film processing, such as etching, deposit ion, implantation etc. In the last two decades rapid development of Kaufman ion source has taken place in our country. Since then there have been some wrong conceptions of the ion source technology, so that the damage of the ion source and the contamination of samples have been brought about. It is time that we should emphasize the correct use of the ion source. The principls to select the right operation parameters of the ion source and the methods of its maintaince and troubleshooting are presented.
出处
《微细加工技术》
1992年第2期21-27,共7页
Microfabrication Technology
关键词
考夫曼离子源
薄膜
thin film technology
ion source
ion beam technology
