摘要
讨论了IC的双层布线工艺中两层铝引线在接触孔处怎样才能形成良好的欧姆接触的问题。接触不好的主要原因是第一次铝引线上的氧化物造成的,因此必须(1)去除第一次铝引线上的自然氧化物;(2)提高蒸发二次铝时的真空度,防止再生氧化物形成。另外,通过热处理可改善接触;淀积二次铝时衬底加热,有利于接触的均匀完善,而且大孔比小孔接触好。
Problems associated with the formation of good ohmic-contact between Al wires on two seperate layers in double-layer routing process are discussed. It is found that the poor contact is mainly caused by oxides on the Al wires formed in the first evaporation. So it is necessary to remove them and to improve the vacuum level for the second evaporation of aluminum, in order to prevent native oxides from forming. In addition, the contact may be improved through thermal treatment, and heating substrates during the evaporation of aluminum is helpful to the uniformity of the contact. And the contact is better for bigger vias than for smaller ones.
出处
《微电子学》
CAS
CSCD
1992年第5期18-23,共6页
Microelectronics
关键词
双层布线
欧姆接触
集成电路
工艺
Double-layer routing, Ohmic-contact, Oxide, IC process
