摘要
本文运用有关离子注入的原理和射程分布损伤机理等理论,结合作者所在工厂的硅栅CMOS工艺中应用全离子注入技术的实验数据及实践经验,对注入工艺参量与器件工艺参数的相关性及注入质量的控制等进行了探讨;就注入过程中的若干影响因素,寻求到了有效的解决方法。此技术已用于作者所在厂的我厂门阵列产品的研制和生产中,取得了令人满意的结果。
Based on the theories of ion implantation,projected range distribution and damage mechanism, the dependence of ion implantation process parameters on the device process parameters and the control of implantation quality are explored by citing experiment data from our all-implantation technique in the Si-gate CMOS process. To a number of interactive factors in the implantation process, some solutions are proposed. Satisfactory results have been achieved from the application of this technique to the development and fabrication of gate arrays.
出处
《微电子学》
CAS
CSCD
1992年第2期56-61,共6页
Microelectronics
