摘要
本文介绍了改进后的氧化物隔离等平面-I工艺在专用集成电路中的应用,采用这种工艺制作的650MHz÷10/11预置分频器通过了军用考核(-55℃～+85℃)标准,常温下最高工作频率可达740MHz。
The application of an improved technology of oxide-isolation isoplanar-I to ASICs is presented in the paper. A 650MHz÷10/11 prescaler with max operating frequency up to 740MHz at ambient temperature has been fabricated, which passed the military test standards.
出处
《微电子学》
CAS
CSCD
1992年第2期14-17,共4页
Microelectronics
