摘要
提出了一个同时表示CVD过程的气体流动、温度分布和物质传输的三维数学模型。应用这个模型预报了在含有SiCl_4的氢气流中沉积出Si的锥台式反应器中的速度场、温度场和浓度场。所得的结果有助于增进对这类反应器中的传输过程的认识,模型亦可用于设计参数的最优化,诸如入口流量,锥台倾角等。
A mathematical model to represent the fluid flow, temperature distri-bution and mass transfer in CVD reactors has been developed. The model is usedto predict the velocity, temperature, and molar concentration profiles in the taper-ed annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of theinvestigation contribute to the understanding of the transport processes involved insuch a system. The model can also be used for optimizing the design parameters,such as inlet flow rate, susceptor tilt angle, etc.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第2期B077-B082,共6页
Acta Metallurgica Sinica
关键词
CVD反应器
传输过程
数学模型
reactor of chemical vapor deposition
velocity field
temperature field
rate of Si deposition
