摘要
针对采用CVD反应器的硅烷热分解工艺制备棒状高纯多晶硅的过程进行了研究。理论上研究了硅烷受热分解的过程,以及温度梯度对硅沉积的影响。从应用角度出发,研究了制备过程中棒状多晶硅致密性、能耗、硅烷转化率等方面的影响因素。通过降低杂质和改善硅棒外观,使生产的多晶硅棒达到了区熔级的标准,并成功区熔成晶。提出了在制备工艺中尚待优化的问题,指出采用侧面间接进气方式有利于沉积的均匀性和致密性。
The paper researches the process of producing high pure polycrystalline silicon rod based on silane thermal decomposition in CVD reactor. Theoretically, it researches the thermal decomposition of silane, and the effect of temperature gradient on silicon deposition. Experimentally, from the viewpoint of application, it studies the impact factors on the compactness of polycrystalline silicon rod, energy consumption and silane conversion rate in the producing process. By decreasing impurities and improving the appearance, the polycrystalline silicon rod meets the standard of FZ grade and is also successfully melted to monocrystalline silicon. The paper puts forwards the problems to be optimized in the preparation process, and points out that adopting side indirect air inflow way will facilitate the deposition uniformity and the density.
出处
《河北工业科技》
CAS
2016年第1期63-67,共5页
Hebei Journal of Industrial Science and Technology
基金
河北省科技支撑计划项目(15214303D)
关键词
晶体学
CVD反应器
硅烷
温度梯度
表面温度
多晶硅
crystallography
CVD reactor
silane
temperature gradient
surface temperature
polycrystalline silicon
