摘要
利用直流 射频 等离子体增强化学气相沉积技术在单晶硅表面制备了类金刚石薄膜 ,采用原子力显微镜、Raman光谱、X射线光电子能谱、红外光谱、表面轮廓仪和纳米压痕仪考察了直流负偏压对类金刚石薄膜表面形貌、微观结构、沉积速率和硬度等性能的影响。结果表明 :无直流负偏压条件下 ,薄膜呈现有机类聚合结构 ,具有较低的SP3含量和硬度 ;叠加上直流负偏压后 ,薄膜具有典型的类金刚石结构特征 ,SP3含量和硬度得到了显著的提高 ;但随着直流负偏压的升高 ,薄膜的沉积速率和H含量逐渐降低 ,而SP3含量和硬度在直流负偏压为 2 0 0V时出现最大值 。
Diamond-like carbon films were successfully deposited on Si substrate by DC-RF-PECVD method.The effects of DC negative bias voltage on surface morphology,microstructure,growth rate and hardness of DLC films were investigated by atomic force microscopy,Raman spectroscopy,X-ray photoelectron spectrometry,infrared spectroscopy,surface profilometer and nano-indentation.As a result,the films deposited without DC negative bias voltage have an organic polymer-like structure with low SP+3 content and hardness.When deposited with DC negative bias voltage,the films have typical diamond-like characteristics with high SP+3 content and hardness.However,the growth rate and H content decrease with the increase of DC negative bias voltage,and the SP+3 content and hardness of the films increase to a maximum value at a DC negative bias voltage of 200V and then decrease thereafter.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2003年第6期802-805,共4页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目 (5992 551 3)
中科院百人计划资助项目
