期刊文献+

Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal—an explanation of our TEM results

Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal-an explanation of our TEM results
在线阅读 下载PDF
导出
摘要 In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region,
出处 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2002年第1期56-58,共3页 IMP & HIRFL Annual Report
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部