摘要
The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation.
