摘要
ATO是一种优良的半导体材料 ,具有较低的红外发射率 ,可制成红外迷彩涂层 ,应用到军事领域。采用化学共沉淀法制备了低发射率的ATO粉末 ,并和特定的粘结剂制得了ATO涂层 ,测得了涂层的发射率和粉末的电阻 ,考察了影响涂层发射率和粉末电阻的因素 ,并对高温烧结的ATO粉末的粒径。
ATO is a good semiconductor with advantageous pr op erties.Due to its low infrared emissivity,it can be made into infrared camouflag e coatings for military purposes.In this research,low emissivity ATO powders are prepared by chemical coprecipition and their infrared emissivity and resistivit y are measured.The factors to influence the emissivity of ATO powders are invest igated and the characteristics of the partical size and partical conformation ar e studied.
出处
《红外技术》
CSCD
北大核心
2003年第6期49-53,共5页
Infrared Technology
