摘要
利用 Al/ SRO/ Si MOS,对富硅二氧化硅 (SRO)材料在横向电压作用下的电荷俘获效应进行了研究 .用L PCVD法在 n型 Si衬底上沉积 SRO材料 ,通过 C- V测量研究其电荷俘获性质 .发现对于 n型 Si衬底 ,在横向电压作用下 ,SRO层能够俘获正电荷 ,电荷俘获效应与 SRO层的性质有关 .基于电位在器件内部的分布及诱导 pn结的形成 。
The charge trapping effect of Al/SRO/Si MOS devices under lateral electrical stress is investigated.SRO layer is deposited on n type Si substrate by LPCVD technique using SiH 4 and N 2O gas mixture as deposition reactant with gas flow ratio of R =/=30.High frequency C V measurements are performed to study the charge trapping effect.It is found that,for n type Si substrate,positive charges can be trapped in the SRO layer with charge density of 3 0×10 11 cm -2 .A simple model based on the potential distribution and the formation of induced pn junction under the stressing electrodes is proposed to interpret the experimental results.
基金
国家自然科学基金(批准号 :5 0 172 0 61)
墨西哥Conacyt资助项目~~
关键词
富硅氧化硅
电荷俘获效应
C-V测试
诱导pn结
silicon rich oxide (SRO)
charge trapping effect
C V measurements
induced pn junction
