摘要
采用 RF磁控溅射方法在 Si衬底上生长 Zn O薄膜 . XRD测量结果表明 ,Zn O薄膜为 c轴择优取向生长的 .对 Zn O薄膜进行了 XPS深度剖析及测试 .测试结果表明 ,在未达到界面时 Zn O均符合正化学计量比 ,是均匀的单相膜 ,表明该方法具有较好的成膜特性 .在界面处 ,Zn的俄歇修正型的化学位移及俄歇峰峰型的变化、 Zn2 p3/2 与 Zn LMM峰积分面积比值的变化、 Si2 p峰的非对称性 ,均表明 Si与 Zn O的界面处有明显的成键作用 .在界面处 ,n型 Si反型为 p型 .
A ZnO thin film was grown on substrate Si by RF reactive magnetron sputtering. The (X-ray) diffraction (XRD) pattern of the sample shows a sharp diffraction peak for ZnO(002), which indicates that as-sputtered film is highly c-axis oriented. In the experiment, we made the profile of depth, measured ZnO in the various depths, and did qualitative and quantitative calculation. The results indicate the sample is uniform unitary phase consistent the positive stoichiometric ratio before etch reaching the interface, which shows this method could be employed to grow films well. But on the interface, the chemical shift of Zn Auger modify shape, the change of Zn Auger peak shape, the ratio of (Zn_(2p_(3/2))) and (Zn_(LMM)) peaks' integral areas, the asymmetry of (Si_(2p)) peak all show the effect of forming the bond on the interface of Si and ZnO. And n-Si is changed into p-Si on the interface.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2003年第4期493-496,共4页
Journal of Jilin University:Science Edition
基金
国家自然科学基金 (批准号 :60 1760 2 6
60 1770 0 7) .
