摘要
应用一种新的薄膜淀积技术──ＩＣＢ方法，对ＣｄＴｅ薄膜的淀积进行了系统的研究。在单晶Ｓｉ及玻璃衬底上演积的ＣｄＴｅ膜具有定向生长的大晶粒结构，其晶粒尺寸、取向度与离化电流、加速电压等可控实验参数之间的关系在实验结果中得到了反映。通过考察入射原子团与表面的相互作用，研究了表面迁移能力以及电荷存在对成膜特性的影响。
An ionized cluster beam(ICB)system is described by which CdTe films were deposited on glass and Si substrates.The films show large crystalline size and high orientation degree.The structure characteristics were examined with X-ray diffraction and electronic microscope as functions of the ionization current and acceleration voltage. The interactions of incident clusters with surfaces are elucidated in terms of surface migration ability and ionic charge for understanding the mechanisms of structure formation.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
1989年第3期43-48,共6页
Journal of Tsinghua University(Science and Technology)
