摘要
用离子束增强沉积法从五氧化钒直接制备二氧化钒薄膜.750℃氮气退火后,薄膜的热电阻温度系数高达4.07％.高剂量的氢、氩混合束的注入使薄膜中的氧缺位较少,并在薄膜中引入了应力,使薄膜的温度-电阻曲线的斜率变大,可能是TCR增大的原因.
The Vanadium dioxide film was prepared from V2O5 by Ion-Beam-Enhanced Deposition. After annealing at 750℃ for 3 min in N2, the thermal coefficient of resistance (TCR) of the IBED film reached 4.07%. The reasons of TCR increasing should be root in the decreasing of oxygen vacancies and stress increasing in the film after high dose H+ and Ar+ mixing beam implantation.
出处
《哈尔滨理工大学学报》
CAS
2003年第5期1-2,共2页
Journal of Harbin University of Science and Technology
基金
国家自然科学基金资助(10175027)
