摘要
氧化钒薄膜及其在微电子和光电子领域中的应用已成为国际上新颖功能材料研究的热点之一。本文综述了V2 O5和VO2 薄膜电学性能与薄膜组分和结构的相关性 。
There has been a lot of interest in vanadium oxides thin films because of their extensive applications in microelectronics and optoelectronics. Relativity between structures and electrical properties was summarized, meanwhile differences among properties of VO 2 and V 2O 5 films prepared on a variety of substrates by different methods are analyzed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第6期572-575,共4页
Journal of Functional Materials
基金
中国科学院上海冶金研究所离子束开放实验室资助
关键词
氧化钒薄膜
相变
热电阻温度系数
功能材料
thin films of vanadium oxides
metal semiconductor phase transition
thermal coefficient of resistance
