摘要
微电子机械系统 ( MEMS)关键的体加工工艺——各向异性腐蚀的样品表面会出现一定程度的不平面貌 ,针对这一现象提出了“应力模型”,用来解释腐蚀后表面粗糙度出现的物理机制 ,对表面激活能、腐蚀液激活能等物理概念进行了分析 ,提出了腐蚀表面粗糙度的计算公式 ,解释了各向异性腐蚀与表面形貌相关的实验现象。
With the silicon anisotropic etching, which is a key fabrication process in the field of microelectro mechanical system(MEMS), the surface of the etched sample will show somewhat roughness. Focusing on this experimental phenomenon, a stress model has been proposed to explain the physical mechanism of this roughness emergence. In this model, some basic physical concepts, such as the surface activation energy, etchant activation energy and relative activation energy are analyzed, an equation to calculate the etching roughness is deduced, some experimental phenomena occurring during anisotropic etching have been explained.
出处
《光电子技术》
CAS
2003年第3期202-206,共5页
Optoelectronic Technology
