摘要
TMAH具有刻硅速率高、晶向选择性好、低毒性和对CMOS工艺的兼容性好等优点,而成为MEMS工艺中常用的刻蚀剂。但TMAH在刻蚀过程中会形成表面小丘,影响表面光滑性。文章重点研究了MEMS工艺中的TMAH湿法刻蚀获得光滑刻蚀表面的工艺。实验结果表明,要获得理想的刻蚀效果,刻蚀液配方和刻蚀条件的选择是非常重要的因素,实验中也得到了一些与其它报道不同的数据。
TMAH has become a commonly used etchant for MEMS technology because of its high silicon etching rate, which depends on crystal orientation, low toxicity and well compatibility with CMOS technology. But during the etching, hillocks will be formed, which will make the surface rough. Smooth etched surface was obtained by using wet selective etching with TMAH. Experiments results show the importance of prescription and conditions of etching. And different data obtained from other reports are given.
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第2期127-130,共4页
Semiconductor Optoelectronics
基金
重庆市院士基金资助项目(6795)
