摘要
研究了用石墨炉原子吸收光谱法测定高纯阴极铜中痕量硅的方法。采用钨涂层石墨管和氟化钾作基体改进剂双重手段阻止了碳化硅的生成 ,解决了石墨炉测硅时生成的碳化硅干扰准确测定的难题。方法灵敏度为 5 8× 10 - 1 1 g/1%吸收 ,硅测定范围为 0～ 15 0 μg/L ,对 10 0 μg/L硅标准溶液重复测定 10次 ,其相对标准偏差为 4 41%。对含 2 g/L铜的高纯铜溶液测得硅回收率为 98%。
A study on the determination of trace silicon in high purity copper cathode by GFAAS has been described in this paper The interference from refractory silicon carbide can be eliminated by using the tungsten coated graphite tube and adding KF as the matrix modifier The sensitivity of this method is 5 8×10 -11 g/1% absorption The linear range is in the concentration of 0-150μg/L for silicon The relative standard deviation(n=10) is 4 41% The recovery of silicon is 98% for the sample containing 2g/L of high purity copper
出处
《冶金分析》
CAS
CSCD
北大核心
2003年第4期18-20,共3页
Metallurgical Analysis
