摘要
自由电子激光(FEL)辐照样品前和辐照样品时,使用变温霍尔测量系统测试了这种n型调制掺杂GaAs/AlGaAs异质结构材料中准二维电子气(2DEG)的迁移率、电子浓度和电阻率。对比这两种情况下的结果可以发现:1)迁移率随温度升高而降低,光照使迁移率增大;2)电子浓度随温度变化关系相对较为复杂,但是平均而言,光照会使电子浓度减小;3)电阻率随温度升高而升高,光照使电阻率减小,但这种影响不明显。对这些现象给出了具体的分析。
The Hall measurement equipment has been used to measure the mobility, the electron concentration and the resistivity of the 2DEG in the n-type modulation-doped GaAs/AlxGa1-xAs heterostruqture material before and during the sample being irradiated by FEL. Comparing the result of two cases, it is found that: 1) with enhancing temperature, the mobility decreases, and FEL makes the mobility increase; 2) the variety of the electron concentration with the temperature is more complex, but generally speaking, FEL makes electron concentration reduce; 3) with enhancing temperature, the resistivity increases, and FEL makes the resistivity decline, but the effect isn't obvious. These phenomena have all been analyzed in details.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2003年第7期593-596,共4页
Chinese Journal of Lasers
基金
国家自然科学基金(基金号:6008802)
全国高校博士点基金
