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微机电微波/射频开关的力学分析及其工艺研究 被引量:7

A Study on the Mechanics of the Microelectromechanical MW/RF Switch and Its Characterization
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摘要  文章主要讨论了微机电微波/射频开关的原理、制备工艺和特性测试。微机电接触式微波/射频开关的关键结构是悬臂梁,当控制电压大于吸合电压时,悬臂梁发生吸合,使开关导通。考虑到微机电制备工艺的兼容性,选择PECVD生长的氮化硅作悬臂梁,聚酰亚胺作牺牲层。测试结果表明,研制的微机电开关在0.5~5GHz的范围内插入损耗为2dB,隔离度达30~50dB。 The mechanical principle,fabrication process and characterization of the microelectromechanical MW/RF switch are presented in the paper The fundamental structure of the switch is the cantilever When the voltage between electrodes is larger than a critical value,the cantilever will contact with the lower electrode,which will turn the switch on In consideration of the process compatibility,PECVD Si nitride is used as the support cantilever and the polyimide as a sacrificial film Characterization shows that the fabricated switch has an insert loss of 2 dB in the frequency range of 05~5 GHz,and its isolation is 30~50 dB
出处 《微电子学》 CAS CSCD 北大核心 2003年第4期273-275,共3页 Microelectronics
基金 国家"973"项目(G1999033105) 上海市AM基金(9810)共同资助
关键词 射频开关 微机电微波 力学分析 共平面波导 悬管梁 插入损耗 隔离度 制备工艺 MEMS MW/RF switch Cantilever Coplanar waveguide Insert loss Isolation
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参考文献5

  • 1Katehi L P B. Novel transmission lines for the sub-milimeter-wave region [J]. Proc IEEE, 1992; 80(10) : 1771-1787.
  • 2Petersen K E. Micromechanical membrane switches on silicon [J]. IBM J Res Develop, 1971; 23(3):376-385.
  • 3Goldsmith C L,Malczewski A, Yao Z J, et al. RF MEMS variable capacitors for tunable filters [J]. RF Microwave Computer-Aided Engineer, 1999 ; 9(3) :362-374.
  • 4Cai Y, Katehi L P B. Wide band series switch fabricated using metal as sacrificial layer[A]. Eur Microwave Conf[C]. Paris, France. 2000. 165-168.
  • 5Yao J J, Chang M F. A surface micromachined miniature switch for telecommunications applications with signal frequency from DC to 4 GHz [A]. Proc Transducers'95 [C]. Stockholm,Sweden. 1995. 384-387.

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