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铌酸锂晶片的化学机械抛光质量研究 被引量:8

Study on the Chemo-mechanical Polishing Quality of LiNb03 Cubic Flake
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摘要 采用化学机械抛光方法,在新型智能抛光机上用自制的抛光液对铌酸锂晶片进行抛光。结果证明选择适当的参数后可以得到一种超平滑表面,几乎无损伤层,且有较高的面形精度和加工效率。采用扫描探针显微镜(SPM)获得了铌酸锂晶片表面微观形貌,并测定了损伤层,分析了铌酸锂晶片的表面形成机理及其表面加工缺陷和损伤层的成因。 In this paper,the Chemical Mechanical Polishing method has been applied to th e experiment research,the test were carried on a new brainpower type super pre cision polishing machine,and the LiNbO 3 wafers were polished in a home-made slurry.Studies have shown that this is an attractive method if parameters were properly selected;We can gain a nearl y none-damaged layer,super smooth surface.In the test,the scanning probe mic roscope(SPM)were used to gain photos of the microcosmic surface of LiNbO 3 wafer,We also an a-lyzed the polishing mechanism on LiNbO 3 wafer,and the cau sa tion of it’s surface machining flaws and the damaged layer.
机构地区 浙江工业大学
出处 《机械工程师》 2003年第7期19-21,共3页 Mechanical Engineer
基金 浙江省自然科学基金项目(501097) 浙江省科技厅重点计划项目(2003C21036) 浙江省青年科技人才培养专项资金项目(RC02066)
关键词 铌酸锂 化学机械抛光 超平滑表面 lithium niobate(LiNbO 3 ) chemical mechanical polishing,super smooth surface
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参考文献3

  • 1袁巨龙,张如源,崔丽芬,河西敏雄,小林昭.石英晶体无损伤理想镜面的超精密加工技术研究[J].仪器仪表学报,1995,16(S1):181-186. 被引量:10
  • 2Jairath R., Farkas J., Huang C.K. et al. Chemical Mechanical Polishing: Process manufacturability [ J ]. Solid State Technology, 1994, (7): 71-75.
  • 3Steigermald J.M., Murarka S. P., Gutmann R.J. Chemical mechanical planarization of microelectronic materials [ M ]. New York: A Wiley Inter science Publication, John Wiley & sons,Inc., 1996.

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