摘要
本文计算了由GaAs/AlGaAs量子点构成的二维量子点阵列的能带结构。其中,对圆形量子点构成的二维阵列采用了紧束缚方法,而对二维Kronig-Penney模型采用微扰法。
We calculated the energy bands of 2D lattices which consist of GaAs/AlGaAs quantum dots. Tight-binding method is applied to a 2D lattice of circular quantum dots, and perturbation method is used for a 2D Kronig-Penney structure.
关键词
异质结
半导体
量子点阵列
能带
GaAs/AlGaAs heterojunction, quantum dot, quantum dot array, Tight-binding method, 2D Kronig-Penney model, Energy band
