期刊文献+

一种新的制备ZnO纳米粒子的方法——阴极电沉积法 被引量:7

A New Method of Growing Nanocrystalline ZnO Films: Cathodic Electrodeposition
在线阅读 下载PDF
导出
摘要 用阴极电沉积法制备高质量ZnO纳米薄膜,电沉积采用含有不同浓度的ZnCl2的非水二甲基亚砜溶液做电解液,室温下恒流沉积,得到纳米ZnO薄膜。研究了ZnCl2浓度对薄膜结构和光学性质的影响。沉积薄膜的ZnO粒径尺寸分别为9 8,10 4,14 5nm,随着ZnCl2浓度的增加而增大。薄膜的可见光致发光谱以紫外的自由激子发射为主。研究表明:以浓度为0 03mol/L的ZnCl2电解液制备的ZnO薄膜光学性质最好。 ZnO film is of great interest for shortwavelength optoelectronic application because ZnO semiconductor with a wide band gap of 334eV has a large exciton binding energy of 60meV at room temperature. At present,there have been many different techniques used to prepare nanocrystalline ZnO films such as molecular beam epitaxy,vapor phase deposition,and pulsed laser deposition.In this paper nanocrystalline ZnO films have been grown by a simple method of cathodic electrodeposition. Preparation of ZnO films using this method presents several advantages such as relatively high deposition rate,low deposition temperature,and low equipment cost. Cathodic electrodeposition has been widely used to deposit ZnO micrometer size particles,while little has been reported on the deposition of ZnO nanoparticles by cathodic electrodeposition on Si substrate.In this paper dimethylsulfoxide (DMSO) solutions containing ZnCl2 is introduced to get OH free ZnO films. Furthermore Si wafers were used as the substrates,which is of considerable interest to the optoelectronic integration.Deposition is carried out in DMSO solutions containing ZnCl2 with different concentration from 001mol/L to 005mol/L on Si substrates at room temperature. The grown films were characterized by means of ex situ techniques:Xray diffraction,atom force microscopy,infrared spectroscopy and photoluminescence spectroscopy. The effects of ZnCl2 concentration on the structural and optical properties of the films have been studied. The mean grain size of the samples,which increases with the increase of ZnCl2 concentration are 98, 104 and 145nm,respectively.The photoluminescence spectra of all the samples show two distinct features: strong ultraviolet emission lines from ZnO free exciton and negligibly weak green emission band around 510nm,which is from deep level defect emission associated with oxygen vacancies in the ZnO lattice.The exciton emission dominated in the photoluminescence spectra.In conclusion,nanocrystalline ZnO films have been fabricated by cathodic electrodeposition on Si substrates from DMSO ZnCl2 electrolytes. The results indicate that this method is a promising way to prepare nanocrystalline ZnO films.
出处 《发光学报》 EI CAS CSCD 北大核心 2003年第3期289-292,共4页 Chinese Journal of Luminescence
基金 中国科学院百人计划 国家自然科学基金(60176003)资助项目
关键词 ZNO薄膜 制备方法 纳米薄膜 阴极电沉积法 ZnO nanocrystalline films cathodic electrodeposition
  • 相关文献

参考文献2

二级参考文献31

  • 1Shionoya S, Yen W M, Eds., Phosphor Handbook [M]. Boca Raton: CRC Press LCC, 1999, 255.
  • 2Holtz P O, Monemar B, Lozykowski H J. Optical properties of Ag-related centers in bulk ZnSe [J]. Phys. Rev. B,1985, B32:986-996.
  • 3Jiang D S, Jung H, Plook K. Temperature dependence of photoluminescence from GaAs single and multiple quantum-well heterostructures grown by molecular-beam epitaxy [J]. J. Appl. Phys., 1988, 64: 1371-1377.
  • 4Mo C M, Li Y H, Lin Y S, et al. Enhancement effect of photoluminescence in assemblies of nano-ZnO particles/silicaaerogels [J]. J. Appl. Phys., 1998, 83:4389-4391.
  • 5Zhang X T, Liu Y C, Zhi Z Z, et al. Resonant Raman scattering and photoluminescence from high-quality nanocrys-talline ZnO thin films prepared by thermal oxidation of ZnS thin films [J]. J. Phys. D, Appl. Phys., 2001, 34:3430-3433.
  • 6Mahamuni S, Borgohain K, Bendre B S, et al. Spectroscopic and structural characterization of electrochemically grownZnO quantum dots [J]. J. Appl. Phys., 1999, 85:2861-2865.
  • 7Wong E M, Searcon P C. ZnO quantum particle thin films fabricated by electrophoretic deposition [J]. Appl. Phys.Lett., 1999, 74:2939-2941.
  • 8Lin Guo, Yang S H, Yang C L, et al. Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and opticalproperties [J]. Appl. Phys. Lett., 2000, 76:2901-2903.
  • 9Studenikin S A, Golego N, Cocivera M. Fabrication of green and orange photoluminescent, undoped ZnO films usingspray pyrolysis [J]. J. Appl. Phys., 1998, 84:2287-2294.
  • 10Haase M, Weller H, Henglein A. Photochemistry and radiation chemistry of colloidal semiconductors [J]. J. Phys.Chem. , 1988, 92:482-487.

共引文献48

同被引文献68

引证文献7

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部