摘要
采用电沉积法制备了CdS薄膜。分别用XRD及SEM分析了薄膜的结构和表面形貌。研究了不同温度和不同沉积电压对薄膜表面硫与镉的化学成分比的影响。最佳的沉积电压为2．5～3V之间。制作了ITO／n-CdS／p-SnS／Ag结构的太阳能电池，在100mW／cm^2的光强下其开路电压0．2V，短路电流13．2mA／cm^2，填充因子0.31，转换效率0．81％。
CdS thin films were obtained by electrodeposition. The structure and surface morphology of the films was studied by X-ray diffraction （XRD） and scanning electron microscope （SEM） method respectively. The influence of different applied potential and temperature on the stoichiometry of the CdS films was investigated. The optimal applied potential was about 2.5-3.0V. The solar cells with the structure of ITO/n-CdS/p-SnS/Ag have been made. The photovoltaic properties of a open-circuit voltage of 0.2V, a short-circuit current of 13.2mA/cm^2, a filling factor of 0.31 , and a conversion efficiency of 0.81% were obtained under the illumination of 100mW/cm^2.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第4期867-870,共4页
Journal of Synthetic Crystals
基金
上海市科委重点科研计划项目(No.03DZ12033)
