摘要
本文采用PECVD技术制备了SiO_xN_y薄膜。用光电子能谱仪和红外光谱仪等对薄膜的结构、组成和其它物理性质作了测量。对温度、功率等工艺参数对薄膜性质的影响作了研究。结果表明,该薄膜是一种非晶态无序结构的、具有良好的抗腐蚀和掩蔽特性的电绝缘介质膜。
PECVD technique was adapted to prepare the SiO_xN_y film. The structure, composition and the physical properties of the film were measured. The influence of the temperature and RF power on the properties of the film was studied. The result shows that the SiO_xN_y film with disordered structure has good properties of corrosion resistance and coating.
出处
《功能材料》
EI
CAS
CSCD
1991年第5期275-278,共4页
Journal of Functional Materials
