摘要
采用射频磁控共溅射方法制备了纳米Ge颗粒镶嵌于SiO2中的复合薄膜(Ge-SiO2),结合样品结构对光吸收特性进行深入的研究。研究发现该类样品存在较强的光吸收,并且光吸收边随Ge颗粒尺寸变小有显著的蓝移现象。采用量子限域模型和介电限域模型分别作了相应的理论计算,结果表明两种模型的理论计算结果与实验值均有一定的偏差;在小尺寸的Ge颗粒情况下,前者与实验值有明显的差异。对此结果我们给出了相应的分析讨论。
Ge nanocrystallites embedded the SiO2 films embedded by Ge nanocrystallites,Ge-SiO2 films, are prepared by rf co-sputtering method from a composite target in argon atmosphere. The structure and the absorbance properties of the films are studied. It is found that the sample films have strong light absorption and the absorption edges of them clearly exhibite the blue shift with the decrease of the size of Ge nanocrystallites. The theoritical calculations with the quantum confinement effect and the dielectric confinement effect have been carried out respectively and there are some differences between calculated values and experimental values.The differences between them are much obvious in the smaller size of Ge nanocrystallites.The results have been analyzed.
出处
《微细加工技术》
2003年第2期49-53,58,共6页
Microfabrication Technology
