摘要
采用表面光电压谱和光致荧光激发谱对多孔硅的能带结构和跃迁特性进行了系统研究。结果表明，多孔硅的带隙明显大于单晶硅的带隙，在３００～５００ｎｍ区间观察到几个与制备条件有关的精细结构带，此构带为多孔硅中不同尺寸的硅线能级。这一发现恰与理论计算结果一致，从实验上支持了多孔硅的量子限域模型。
The surface photovoltaic spectroscopy(SPS)and photoluminescence excitation spectroscopy(PLE)were developed for the investigation of transition states of porous silicons,The results indicate that there is a larger band gap in porous silicon than in bulk crystal silicon.A group of bands emerge from the energetic position of 300～500 nm,which are dependent on the feature size of the silicon wires in a porous silicon. This experimental finding is in good agreement with the result of calculation of electronic structure. The evidence strongly supports the model of quantum confinement effect.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第12期1917-1920,共4页
Chemical Journal of Chinese Universities
基金
国家自然科学基金
关键词
多孔硅
光致发光
SPS
PLE
Porous silicon, Photovoltage,Photoluminescence,Electronic structure
