摘要
介绍一种实时监控行波半导体激光放大器(TW-SLA)抗反膜(AR)超低剩余反射率的新方法。从理论和实验上分析了剩余反射率与SLA的输出光功率关系及温度对其输出功率的影响。在1.3μm InGaAsP/InP掩埋异质结(BH)激光二极管(LD)上镀单层SiO_x或SiO_(x1)/SiO_(x2)膜获得了低于5×10^(-4)的超低反射率。
A new method of monitoring the in-situ extremely low residual reflectivity of antireflection (AR) coating of travelling-wave semiconductor laser amplifier (TW-SLA) is presented. The relations among the residual reflectivity, temperature and the output power of SLA are analyzed theoretically and experimentally. Minimum reflec- tivity less than 5×10^(-4) can be realized by means of using a 1.3μm InGaAsP/InP buried-hetero-structure (BH) laser diode coated with single-layer SiO_x or double-lager SiO_(x1)/SiO_(x2) film.
出处
《激光技术》
CAS
CSCD
1992年第2期76-80,共5页
Laser Technology
基金
国家"863"计划资助项目
