摘要
介绍了氮化镓微电子器件的优势和现状。提出将GaNHEMT作为微波器件用于混合微波集成电路(MIC)和微波单片集成电路(MMIC),在射频输出功率、器件优值等方面,均具有明显优点,并列举了成功的例子。为了加快发展MMIC,必须解决好几个关键问题,即提高材料质量和尺寸,完善制造工艺,克服器件电流下降、增益过早饱和与射频输出功率退化等现象。
The advantage and status of GaN microelectronic devices have been briefly shown in this paper.The GaN HEMT as a microwave device for hybrid microwave integrated circuit(MIC)and microwave monolithic integrated circuit(MMIC)benefits from both RF output power and de-vices figure of merit,such as hybrid MIC packaged and high-power broadband MMIC.There are some key problems for rapidly developing MMIC,for example,the improvement of material qual-ity and size,optimization of process technology,overcome the phenomena of current slump ,the premature saturation and degradation of RF output power.
出处
《微纳电子技术》
CAS
2003年第6期1-5,共5页
Micronanoelectronic Technology
