摘要
硼是半导体材料中最主要的杂质,而精确控制杂质浓度剖面是半导体工艺的关键问题之一.对硼在硅中的扩散从理论与实验的结合方面进行了系统的讨论.
Boron is the primary impurity in semiconductor material,and accurately controling impurity density of section is one of the key questions in semiconductor-technics. The diffusion of Boron in Silicon is discussed from the perspectives of both theory and experiment.
出处
《长沙电力学院学报（自然科学版）》
2003年第2期83-86,共4页
JOurnal of Changsha University of electric Power:Natural Science
