摘要
用X射线衍射方法对液相外延(LPE)技术生长的碲镉汞(MCT)外延薄膜和CdTe衬底进行了观察与分析。研究表明:MCT薄膜中存在着不同程度的应力,主要表现为晶格的扭曲(300″～1200″范围),这种扭曲致使外延膜双晶回摆曲线宽化,宽化值为100″～150″,外延膜的晶格扭曲与CdTe衬底的不完整性有对应关系。研究还表明:LPE的生长条件对外延膜中的晶格扭曲也有较大影响。本文还讨论了CdTe衬底晶格扭曲形成的因素并探究了减少外延膜晶格扭曲的方法。
Hg_(1-x)Cd_xTe films have been grown by an open-tube, horizontal slider-type LPE growth technique from Te solutions. The stress in MCT epi-films has been studied using X-ray diffraction method. The results indicated that the stress in MCT epi-films caused lattice deformation, which enlarged the FWHM values of the films. It is found that such lattice deformation is related to the CdTe substrates and LPE growth conditions. The reason for the lattice deformation of CdTe substrates and the methods to reduce lattice deformation in the films has also been discussed in this paper.
出处
《红外技术》
CSCD
1992年第4期1-6,共6页
Infrared Technology
基金
国家"863"高技术经费资助项目
关键词
液相
外延薄膜
碲镉汞
晶格
应力
LPE films
MCT
Lattice deformation
CdTe substrates
Structure perfection
